Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Engineering

• Strain 100%
• High Resolution 100%
• Transmissions 50%
• Observables 50%
• Mass Transfer 50%
• Layer Thickness 50%
• Band Edge 50%
• Material Quality 50%
• Integrated Intensity 50%
• Reciprocal Space 50%
• Optical Phonon 50%
• Growth Surface 50%

Earth and Planetary Sciences

• Flat Surface 100%
• Trench 100%
• High Resolution 66%
• Raman Spectroscopy 33%
• Electron Microscope 33%
• Phonon 33%
• Mass Transfer 33%
• Photoluminescence 33%

Material Science

• X Ray Diffraction Analysis 100%
• Photoluminescence 50%
• Raman Spectroscopy 50%
• Luminescence 50%