The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

Chenglin Heng, Wenyong Su, Qiwei Zhang, Xiaoqian Ren, Penggan Yin, Huiping Pan, Shude Yao, Terje G. Finstad*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon-rich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu3+ ions to Eu2+ by raising the annealing temperature from 700 to 1200 °C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence. The variation of PL intensity from Yb3+ ions with annealing in N 2,was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer.

Original languageEnglish
Pages (from-to)339-344
Number of pages6
JournalJournal of Luminescence
Volume154
DOIs
Publication statusPublished - Oct 2014

Keywords

  • Energy transfer
  • Eu
  • Luminescence
  • Rare earth compounds
  • Silicon rich oxide
  • Yb

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