The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

Chenglin Heng; Wenyong Su; Qiwei Zhang; Xiaoqian Ren; Penggan Yin; Huiping Pan; Shude Yao; Terje G. Finstad

doi:10.1016/j.jlumin.2014.04.035

The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

Chenglin Heng, Wenyong Su, Qiwei Zhang, Xiaoqian Ren, Penggan Yin, Huiping Pan, Shude Yao, Terje G. Finstad^*

^*此作品的通讯作者

物理学院

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2 引用（Scopus）

摘要

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon-rich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu³⁺ ions to Eu²⁺ by raising the annealing temperature from 700 to 1200 °C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu²⁺-related luminescence. The variation of PL intensity from Yb³⁺ ions with annealing in N ₂,was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer.

源语言	英语
页（从-至）	339-344
页数	6
期刊	Journal of Luminescence
卷	154
DOI	https://doi.org/10.1016/j.jlumin.2014.04.035
出版状态	已出版 - 10月 2014

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@article{d2c831ffe2374790957ac813ffb2e834,

title = "The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides",

abstract = "We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon-rich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu3+ ions to Eu2+ by raising the annealing temperature from 700 to 1200 °C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence. The variation of PL intensity from Yb3+ ions with annealing in N 2,was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer.",

keywords = "Energy transfer, Eu, Luminescence, Rare earth compounds, Silicon rich oxide, Yb",

author = "Chenglin Heng and Wenyong Su and Qiwei Zhang and Xiaoqian Ren and Penggan Yin and Huiping Pan and Shude Yao and Finstad, {Terje G.}",

year = "2014",

month = oct,

doi = "10.1016/j.jlumin.2014.04.035",

language = "English",

volume = "154",

pages = "339--344",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

AU - Heng, Chenglin

AU - Su, Wenyong

AU - Zhang, Qiwei

AU - Ren, Xiaoqian

AU - Yin, Penggan

AU - Pan, Huiping

AU - Yao, Shude

AU - Finstad, Terje G.

PY - 2014/10

Y1 - 2014/10

N2 - We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon-rich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu3+ ions to Eu2+ by raising the annealing temperature from 700 to 1200 °C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence. The variation of PL intensity from Yb3+ ions with annealing in N 2,was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer.

AB - We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon-rich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu3+ ions to Eu2+ by raising the annealing temperature from 700 to 1200 °C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence. The variation of PL intensity from Yb3+ ions with annealing in N 2,was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer.

KW - Energy transfer

KW - Eu

KW - Luminescence

KW - Rare earth compounds

KW - Silicon rich oxide

KW - Yb

UR - http://www.scopus.com/inward/record.url?scp=84901996746&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2014.04.035

DO - 10.1016/j.jlumin.2014.04.035

M3 - Article

AN - SCOPUS:84901996746

SN - 0022-2313

VL - 154

SP - 339

EP - 344

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

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