Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

C. L. HENG; W. XIANG; W. Y. SU; H. C. WU; Y. K. GAO; P. G. YIN; T. G. FINSTAD

doi:10.1364/OME.7.003041

Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

C. L. HENG^*, W. XIANG, W. Y. SU, H. C. WU, Y. K. GAO, P. G. YIN, T. G. FINSTAD

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We studied the photoluminescence (PL) properties of (Ce + Yb) co-doped ZnO thin films as a function of high temperature annealing. The films were fabricated by magnetron sputtering. After 1000-1100°C annealing, the near band edge (NBE) emissions of the films were dozens to a hundred times stronger than that of undoped ZnO, while the Yb³⁺ emission (~980 nm) was quite weak, indicating that energy transfers from the ZnO host to Yb³⁺ ions in the films were not efficient. X-ray diffraction analysis and scanning electron microscopy observations demonstrated that the (Ce + Yb) co-doping had a large effect on the morphology and crystallinity of the films. The crystallinity enhancement of the films is considered to be the main reason for the strong NBE enhancements of the co-doped ZnO films.

Original language	English
Pages (from-to)	1-10
Number of pages	10
Journal	Optical Materials Express
Volume	7
Issue number	8
DOIs	https://doi.org/10.1364/OME.7.003041
Publication status	Published - 2017

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title = "Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing",

abstract = "We studied the photoluminescence (PL) properties of (Ce + Yb) co-doped ZnO thin films as a function of high temperature annealing. The films were fabricated by magnetron sputtering. After 1000-1100°C annealing, the near band edge (NBE) emissions of the films were dozens to a hundred times stronger than that of undoped ZnO, while the Yb3+ emission (~980 nm) was quite weak, indicating that energy transfers from the ZnO host to Yb3+ ions in the films were not efficient. X-ray diffraction analysis and scanning electron microscopy observations demonstrated that the (Ce + Yb) co-doping had a large effect on the morphology and crystallinity of the films. The crystallinity enhancement of the films is considered to be the main reason for the strong NBE enhancements of the co-doped ZnO films.",

author = "HENG, {C. L.} and W. XIANG and SU, {W. Y.} and WU, {H. C.} and GAO, {Y. K.} and YIN, {P. G.} and FINSTAD, {T. G.}",

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T1 - Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

AU - HENG, C. L.

AU - XIANG, W.

AU - SU, W. Y.

AU - WU, H. C.

AU - GAO, Y. K.

AU - YIN, P. G.

AU - FINSTAD, T. G.

PY - 2017

Y1 - 2017

N2 - We studied the photoluminescence (PL) properties of (Ce + Yb) co-doped ZnO thin films as a function of high temperature annealing. The films were fabricated by magnetron sputtering. After 1000-1100°C annealing, the near band edge (NBE) emissions of the films were dozens to a hundred times stronger than that of undoped ZnO, while the Yb3+ emission (~980 nm) was quite weak, indicating that energy transfers from the ZnO host to Yb3+ ions in the films were not efficient. X-ray diffraction analysis and scanning electron microscopy observations demonstrated that the (Ce + Yb) co-doping had a large effect on the morphology and crystallinity of the films. The crystallinity enhancement of the films is considered to be the main reason for the strong NBE enhancements of the co-doped ZnO films.

AB - We studied the photoluminescence (PL) properties of (Ce + Yb) co-doped ZnO thin films as a function of high temperature annealing. The films were fabricated by magnetron sputtering. After 1000-1100°C annealing, the near band edge (NBE) emissions of the films were dozens to a hundred times stronger than that of undoped ZnO, while the Yb3+ emission (~980 nm) was quite weak, indicating that energy transfers from the ZnO host to Yb3+ ions in the films were not efficient. X-ray diffraction analysis and scanning electron microscopy observations demonstrated that the (Ce + Yb) co-doping had a large effect on the morphology and crystallinity of the films. The crystallinity enhancement of the films is considered to be the main reason for the strong NBE enhancements of the co-doped ZnO films.

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U2 - 10.1364/OME.7.003041

DO - 10.1364/OME.7.003041

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JO - Optical Materials Express

JF - Optical Materials Express

IS - 8

ER -

Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

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