Surface enhanced Raman scattering on ion-beam-deposited TiNx/Si substrates

Shujun Zhao, Yue Zhao, Yujing Ran, Huiping Lu, Qian Guo, Chang Gao, Yanfeng Zhao, Wenjie Yan, Zhaotan Jiang, Hanchun Wu, Duan Zhang, Zhi Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Titanium nitride (TiNx) thin films were fabricated on silicon substrates by ion beam deposition. The surface enhanced Raman scattering (SERS) effect of the TiNx/Si substrates was studied with Rhodamine 6G as probe molecule. The results show that TiNx thin films can enhance the Raman signal, and the film with suitable thickness can significantly improve the SERS performance. For the 30 nm thick TiNx thin films the enhancement factor is up to 6.6×104. The enhancement factor can be further improved several times by assisting ions. The main role of the assisting ions is to enhance the intensity and density of hot spots through the modification of surface morphology and plasmons. The study implies that high carrier concentration, and suitable size and high density of the grains and gaps are important for improving SERS performance. This work indicates the promising future of TiNx and assisting ions in the development of SERS active templates.

Original languageEnglish
Pages (from-to)24-31
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume472
DOIs
Publication statusPublished - 1 Jun 2020

Keywords

  • Assisting ions
  • Localized field
  • Surface enhanced Raman scattering
  • Titanium nitride

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