Photo-enhanced gas sensing of SnS                         2                          with nanoscale defects

Wen Jie Yan; Deng Yun Chen; Huei Ru Fuh; Ying Lan Li; Duan Zhang; Huajun Liu; Gang Wu; Lei Zhang; Xiangkui Ren; Jiung Cho; Miri Choi; Byong Sun Chun; Cormac Coileáin; Hong Jun Xu; Zhi Wang; Zhaotan Jiang; Ching Ray Chang; Han Chun Wu

doi:10.1039/c8ra08857h

Photo-enhanced gas sensing of SnS ₂ with nanoscale defects

Wen Jie Yan, Deng Yun Chen, Huei Ru Fuh^*, Ying Lan Li, Duan Zhang, Huajun Liu, Gang Wu, Lei Zhang, Xiangkui Ren, Jiung Cho, Miri Choi, Byong Sun Chun, Cormac Coileáin, Hong Jun Xu, Zhi Wang, Zhaotan Jiang, Ching Ray Chang, Han Chun Wu

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Recently a SnS ₂ based NO ₂ gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS ₂ grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO ₂ gas sensor based on SnS ₂ with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS ₂ . More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO ₂ concentration, while the average desorption time always decreases with NO ₂ concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS ₂ with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.

Original language	English
Pages (from-to)	626-635
Number of pages	10
Journal	RSC Advances
Volume	9
Issue number	2
DOIs	https://doi.org/10.1039/c8ra08857h
Publication status	Published - 2019

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Yan, W. J., Chen, D. Y., Fuh, H. R., Li, Y. L., Zhang, D., Liu, H., Wu, G., Zhang, L., Ren, X., Cho, J., Choi, M., Chun, B. S., Coileáin, C., Xu, H. J., Wang, Z., Jiang, Z., Chang, C. R., & Wu, H. C. (2019). Photo-enhanced gas sensing of SnS ₂ with nanoscale defects RSC Advances, 9(2), 626-635. https://doi.org/10.1039/c8ra08857h

@article{e2266ec9e7174a0e8513d5337ccb3ea2,

title = " Photo-enhanced gas sensing of SnS 2 with nanoscale defects ",

abstract = " Recently a SnS 2 based NO 2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS 2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO 2 gas sensor based on SnS 2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS 2 . More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO 2 concentration, while the average desorption time always decreases with NO 2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS 2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.",

author = "Yan, {Wen Jie} and Chen, {Deng Yun} and Fuh, {Huei Ru} and Li, {Ying Lan} and Duan Zhang and Huajun Liu and Gang Wu and Lei Zhang and Xiangkui Ren and Jiung Cho and Miri Choi and Chun, {Byong Sun} and Cormac Coile{\'a}in and Xu, {Hong Jun} and Zhi Wang and Zhaotan Jiang and Chang, {Ching Ray} and Wu, {Han Chun}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/c8ra08857h",

language = "English",

volume = "9",

pages = "626--635",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "2",

}

Yan, WJ, Chen, DY, Fuh, HR, Li, YL, Zhang, D, Liu, H, Wu, G, Zhang, L, Ren, X, Cho, J, Choi, M, Chun, BS, Coileáin, C, Xu, HJ, Wang, Z , Jiang, Z, Chang, CR & Wu, HC 2019, ' Photo-enhanced gas sensing of SnS ₂ with nanoscale defects ', RSC Advances, vol. 9, no. 2, pp. 626-635. https://doi.org/10.1039/c8ra08857h

TY - JOUR

T1 - Photo-enhanced gas sensing of SnS 2 with nanoscale defects

AU - Yan, Wen Jie

AU - Chen, Deng Yun

AU - Fuh, Huei Ru

AU - Li, Ying Lan

AU - Zhang, Duan

AU - Liu, Huajun

AU - Wu, Gang

AU - Zhang, Lei

AU - Ren, Xiangkui

AU - Cho, Jiung

AU - Choi, Miri

AU - Chun, Byong Sun

AU - Coileáin, Cormac

AU - Xu, Hong Jun

AU - Wang, Zhi

AU - Jiang, Zhaotan

AU - Chang, Ching Ray

AU - Wu, Han Chun

PY - 2019

Y1 - 2019

N2 - Recently a SnS 2 based NO 2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS 2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO 2 gas sensor based on SnS 2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS 2 . More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO 2 concentration, while the average desorption time always decreases with NO 2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS 2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.

AB - Recently a SnS 2 based NO 2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS 2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO 2 gas sensor based on SnS 2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS 2 . More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO 2 concentration, while the average desorption time always decreases with NO 2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS 2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.

UR - http://www.scopus.com/inward/record.url?scp=85059891320&partnerID=8YFLogxK

U2 - 10.1039/c8ra08857h

DO - 10.1039/c8ra08857h

M3 - Article

AN - SCOPUS:85059891320

SN - 2046-2069

VL - 9

SP - 626

EP - 635

JO - RSC Advances

JF - RSC Advances

IS - 2

ER -

Photo-enhanced gas sensing of SnS ₂ with nanoscale defects

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