The formation of light emitting cerium silicates in cerium-doped silicon oxides

Jing Li; Othman Zalloum; Tyler Roschuk; Chenglin Heng; Jacek Wojcik; Peter Mascher

doi:10.1063/1.3067871

The formation of light emitting cerium silicates in cerium-doped silicon oxides

Jing Li, Othman Zalloum, Tyler Roschuk, Chenglin Heng, Jacek Wojcik, Peter Mascher^*

^*此作品的通讯作者

McMaster University

科研成果: 期刊稿件 › 文章 › 同行评审

41 引用（Scopus）

摘要

Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

源语言	英语
文章编号	011112
期刊	Applied Physics Letters
卷	94
期	1
DOI	https://doi.org/10.1063/1.3067871
出版状态	已出版 - 2009
已对外发布	是

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abstract = "Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.",

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AU - Wojcik, Jacek

AU - Mascher, Peter

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N2 - Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

AB - Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

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The formation of light emitting cerium silicates in cerium-doped silicon oxides

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