The formation of light emitting cerium silicates in cerium-doped silicon oxides

Jing Li; Othman Zalloum; Tyler Roschuk; Chenglin Heng; Jacek Wojcik; Peter Mascher

doi:10.1063/1.3067871

The formation of light emitting cerium silicates in cerium-doped silicon oxides

Jing Li, Othman Zalloum, Tyler Roschuk, Chenglin Heng, Jacek Wojcik, Peter Mascher^*

^*Corresponding author for this work

McMaster University

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

Original language	English
Article number	011112
Journal	Applied Physics Letters
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.3067871
Publication status	Published - 2009
Externally published	Yes

Access to Document

10.1063/1.3067871

Cite this

@article{ab19e07257fc4e03a17542a49ac60377,

title = "The formation of light emitting cerium silicates in cerium-doped silicon oxides",

abstract = "Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.",

author = "Jing Li and Othman Zalloum and Tyler Roschuk and Chenglin Heng and Jacek Wojcik and Peter Mascher",

year = "2009",

doi = "10.1063/1.3067871",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - The formation of light emitting cerium silicates in cerium-doped silicon oxides

AU - Li, Jing

AU - Zalloum, Othman

AU - Roschuk, Tyler

AU - Heng, Chenglin

AU - Wojcik, Jacek

AU - Mascher, Peter

PY - 2009

Y1 - 2009

N2 - Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

AB - Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N2 at 1200 °C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2 Si2 O7 or Ce4.667 (SiO4) 3 O], the presence of which was confirmed by high resolution transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=58149528207&partnerID=8YFLogxK

U2 - 10.1063/1.3067871

DO - 10.1063/1.3067871

M3 - Article

AN - SCOPUS:58149528207

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011112

ER -

The formation of light emitting cerium silicates in cerium-doped silicon oxides

Abstract

Access to Document

Other files and links

Fingerprint

Cite this