Influences of thicknesses of SiO₂ layers on electroluminescence from amorphous Si/SiO₂ superlattices

Amorphous Si/SiO₂ superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO₂ layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO₂) superlattices/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO₂ layers in the amorphous Si/SiO₂ superlattices and from input electrical power are studied systematically.