Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices

C. L. Heng; B. R. Zhang; Y. P. Qiao; Z. C. Ma; W. H. Zong; G. G. Qin

doi:10.1016/S0921-4526(99)00170-2

Influences of thicknesses of SiO₂ layers on electroluminescence from amorphous Si/SiO₂ superlattices

C. L. Heng^*, B. R. Zhang, Y. P. Qiao, Z. C. Ma, W. H. Zong, G. G. Qin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Amorphous Si/SiO₂ superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO₂ layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO₂) superlattices/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO₂ layers in the amorphous Si/SiO₂ superlattices and from input electrical power are studied systematically.

Original language	English
Pages (from-to)	104-109
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	270
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-4526(99)00170-2
Publication status	Published - 1 Oct 1999
Externally published	Yes

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10.1016/S0921-4526(99)00170-2

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title = "Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices",

abstract = "Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattices/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically.",

author = "Heng, {C. L.} and Zhang, {B. R.} and Qiao, {Y. P.} and Ma, {Z. C.} and Zong, {W. H.} and Qin, {G. G.}",

year = "1999",

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doi = "10.1016/S0921-4526(99)00170-2",

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TY - JOUR

T1 - Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices

AU - Heng, C. L.

AU - Zhang, B. R.

AU - Qiao, Y. P.

AU - Ma, Z. C.

AU - Zong, W. H.

AU - Qin, G. G.

PY - 1999/10/1

Y1 - 1999/10/1

N2 - Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattices/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically.

AB - Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattices/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically.

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U2 - 10.1016/S0921-4526(99)00170-2

DO - 10.1016/S0921-4526(99)00170-2

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VL - 270

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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ER -

Influences of thicknesses of SiO₂ layers on electroluminescence from amorphous Si/SiO₂ superlattices

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