An abnormal photoluminescence enhancement in (Eu, Yb) Co-doped SiO 2 thin film

C. L. Heng*, J. T. Li, Z. Han, P. G. Yin

*此作品的通讯作者

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2 引用 (Scopus)

摘要

We report on the photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped SiO2 thin film. The Eu (both Eu2+ and Eu3+) PL and the Yb3+ PL is co-related under different temperature annealing. However, upon 1100°C anneal, the Eu PL intensity is significantly stronger than other temperatures anneal. Transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, suggest that meta-stable Eu2+-related silicates (EuSiO3) have formed in the oxide as well as the formation of Yb2Si 2O7.

源语言英语
页(从-至)179-186
页数8
期刊Integrated Ferroelectrics
151
1
DOI
出版状态已出版 - 12 2月 2014

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