摘要
We report on the photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped SiO2 thin film. The Eu (both Eu2+ and Eu3+) PL and the Yb3+ PL is co-related under different temperature annealing. However, upon 1100°C anneal, the Eu PL intensity is significantly stronger than other temperatures anneal. Transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, suggest that meta-stable Eu2+-related silicates (EuSiO3) have formed in the oxide as well as the formation of Yb2Si 2O7.
源语言 | 英语 |
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页(从-至) | 179-186 |
页数 | 8 |
期刊 | Integrated Ferroelectrics |
卷 | 151 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 12 2月 2014 |