Tunable transfer behaviors of single-layer WSe2 field effect transistors by hydrazine

Mengxing Sun, Dan Xie, Yilin Sun, Zhixin Li, Jianlong Xu, Ruixuan Dai, Xian Li, Cheng Zhang, Changjiu Teng, Pu Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Polarity modulation of single-layer WSe2 field effect transistor is investigated by using hydrazine as a solution-processable and effective n-type dopant for WSe2. Compared to the intrinsic hole-dominant ambipolar behaviors, highly effective n-type doping characteristics are achieved after hydrazine treatment. It is found that the on-current improves obviously by one order of magnitude and the metal-WSe2 contact resistance decreases at the same time. After hydrazine being removed, the electron doping effect disappears which indicates hydrazine treatment is a reversible doping process. This work provides a possibility for transition metal dichalcogenides-based logic device applications in the future.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsYu-Long Jiang, Ting-Ao Tang, Ru Huang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages478-480
Number of pages3
ISBN (Electronic)9781467397179
DOIs
Publication statusPublished - 2016
Externally publishedYes
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 25 Oct 201628 Oct 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/TerritoryChina
CityHangzhou
Period25/10/1628/10/16

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