Tunable transfer behaviors of single-layer WSe2 field effect transistors by hydrazine

Mengxing Sun, Dan Xie, Yilin Sun, Zhixin Li, Jianlong Xu, Ruixuan Dai, Xian Li, Cheng Zhang, Changjiu Teng, Pu Yang

科研成果: 书/报告/会议事项章节会议稿件同行评审

2 引用 (Scopus)

摘要

Polarity modulation of single-layer WSe2 field effect transistor is investigated by using hydrazine as a solution-processable and effective n-type dopant for WSe2. Compared to the intrinsic hole-dominant ambipolar behaviors, highly effective n-type doping characteristics are achieved after hydrazine treatment. It is found that the on-current improves obviously by one order of magnitude and the metal-WSe2 contact resistance decreases at the same time. After hydrazine being removed, the electron doping effect disappears which indicates hydrazine treatment is a reversible doping process. This work provides a possibility for transition metal dichalcogenides-based logic device applications in the future.

源语言英语
主期刊名2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
编辑Yu-Long Jiang, Ting-Ao Tang, Ru Huang
出版商Institute of Electrical and Electronics Engineers Inc.
478-480
页数3
ISBN(电子版)9781467397179
DOI
出版状态已出版 - 2016
已对外发布
活动13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, 中国
期限: 25 10月 201628 10月 2016

出版系列

姓名2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

会议

会议13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
国家/地区中国
Hangzhou
时期25/10/1628/10/16

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