The Electrical Performances of Monolayer MoS2-Based Transistors under Ultra-Low Temperature

Mengxing Sun; Dan Xie; Yilin Sun; Weiwei Li; Tianling Ren

doi:10.1109/NANO.2018.8626383

The Electrical Performances of Monolayer MoS₂-Based Transistors under Ultra-Low Temperature

Mengxing Sun, Dan Xie^*, Yilin Sun, Weiwei Li, Tianling Ren

^*Corresponding author for this work

Tsinghua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS₂ and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS₂ and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS₂ and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS₂-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626383
Publication status	Published - 2 Jul 2018
Externally published	Yes
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	23/07/18 → 26/07/18

Access to Document

10.1109/NANO.2018.8626383

Cite this

@inproceedings{ca95749c934142408fccc2892ea003e7,

title = "The Electrical Performances of Monolayer MoS2-Based Transistors under Ultra-Low Temperature",

abstract = "The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.",

author = "Mengxing Sun and Dan Xie and Yilin Sun and Weiwei Li and Tianling Ren",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/NANO.2018.8626383",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

booktitle = "18th International Conference on Nanotechnology, NANO 2018",

address = "United States",

}

Sun, M, Xie, D, Sun, Y, Li, W & Ren, T 2018, The Electrical Performances of Monolayer MoS₂-Based Transistors under Ultra-Low Temperature. in 18th International Conference on Nanotechnology, NANO 2018., 8626383, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626383

The Electrical Performances of Monolayer MoS₂-Based Transistors under Ultra-Low Temperature. / Sun, Mengxing; Xie, Dan; Sun, Yilin et al.
18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2018. 8626383 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.

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