TY - GEN
T1 - The Electrical Performances of Monolayer MoS2-Based Transistors under Ultra-Low Temperature
AU - Sun, Mengxing
AU - Xie, Dan
AU - Sun, Yilin
AU - Li, Weiwei
AU - Ren, Tianling
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.
AB - The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.
UR - http://www.scopus.com/inward/record.url?scp=85062286931&partnerID=8YFLogxK
U2 - 10.1109/NANO.2018.8626383
DO - 10.1109/NANO.2018.8626383
M3 - Conference contribution
AN - SCOPUS:85062286931
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 18th International Conference on Nanotechnology, NANO 2018
PB - IEEE Computer Society
T2 - 18th International Conference on Nanotechnology, NANO 2018
Y2 - 23 July 2018 through 26 July 2018
ER -