Study on surge current characteristic of SiC SBD with different solder layer structure

Zheng Hu, Yinjie Wang, Xiuchen Zhao, Yongjun Huo, Yidan Tang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, surge current characteristic of SiC SBD with different solder layer structure and the dynamic trend of junction temperature during surge current were studied by FloTHERM. It was found that different surge current and highest junction temperature difference affect surge characteristic of SiC SBD device with different solder materials and thicknesses. The SiC SBD device packaged by nanosilver has the lowest junction temperature under the same surge current due to the better heat difussion path and lager heat flux than the others. The maximum junction temperature of SiC SBD device decrease firstly and then increase with increasing solder layer thickness from 20μm to 120μm, which may be caused by volume strain energy. Meanwhile, it was seen that the highest junction temperature exhibits 1ms delay compared to the peak surge current of 5ms because the heat generated at 5ms is more than the heat flux. Based on the variation of highest junction temperature difference, the junction temperature change is related to device working state that includes unipolar conduction and bipolar conduction. It provides simulation theoretical guidance for the effect of different solder materials and thicknesses on SiC SBD devices under surge current in the future.

Original languageEnglish
Title of host publication2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338812
DOIs
Publication statusPublished - 2023
Event24th International Conference on Electronic Packaging Technology, ICEPT 2023 - Shihezi City, China
Duration: 8 Aug 202311 Aug 2023

Publication series

Name2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

Conference

Conference24th International Conference on Electronic Packaging Technology, ICEPT 2023
Country/TerritoryChina
CityShihezi City
Period8/08/2311/08/23

Keywords

  • FloTHERM simulation
  • Junction temperature
  • SiC SBD
  • Solder layer structure
  • Surge current

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