Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

Haowei Wang; Zhixiao Li; Chunjie Fu; Dan Yang; Li Zhang; Shengyi Yang; Bingsuo Zou

doi:10.1109/LPT.2014.2386342

Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

Haowei Wang, Zhixiao Li, Chunjie Fu, Dan Yang, Li Zhang, Shengyi Yang^*, Bingsuo Zou

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 10¹² Jones, respectively, at V_DS=-40 V and V_G=-40 V with 40 mW/cm ² of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

Original language	English
Pages (from-to)	612-615
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2014.2386342
Publication status	Published - 15 Mar 2015

Keywords

Colloidal quantum dots (CQDs)
Field-effect transistor (FET)
Lead selenide (PbSe)
Near infrared
Photodetector

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10.1109/LPT.2014.2386342

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title = "Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector",

abstract = "A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.",

keywords = "Colloidal quantum dots (CQDs), Field-effect transistor (FET), Lead selenide (PbSe), Near infrared, Photodetector",

author = "Haowei Wang and Zhixiao Li and Chunjie Fu and Dan Yang and Li Zhang and Shengyi Yang and Bingsuo Zou",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/LPT.2014.2386342",

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AU - Wang, Haowei

AU - Li, Zhixiao

AU - Fu, Chunjie

AU - Yang, Dan

AU - Zhang, Li

AU - Yang, Shengyi

AU - Zou, Bingsuo

PY - 2015/3/15

Y1 - 2015/3/15

N2 - A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

AB - A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

KW - Colloidal quantum dots (CQDs)

KW - Field-effect transistor (FET)

KW - Lead selenide (PbSe)

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KW - Photodetector

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Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

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Keywords

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