Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

Haowei Wang; Zhixiao Li; Chunjie Fu; Dan Yang; Li Zhang; Shengyi Yang; Bingsuo Zou

doi:10.1109/LPT.2014.2386342

Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

Haowei Wang, Zhixiao Li, Chunjie Fu, Dan Yang, Li Zhang, Shengyi Yang^*, Bingsuo Zou

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

43 引用（Scopus）

摘要

A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 10¹² Jones, respectively, at V_DS=-40 V and V_G=-40 V with 40 mW/cm ² of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

源语言	英语
页（从-至）	612-615
页数	4
期刊	IEEE Photonics Technology Letters
卷	27
期	6
DOI	https://doi.org/10.1109/LPT.2014.2386342
出版状态	已出版 - 15 3月 2015

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10.1109/LPT.2014.2386342

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title = "Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector",

abstract = "A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.",

keywords = "Colloidal quantum dots (CQDs), Field-effect transistor (FET), Lead selenide (PbSe), Near infrared, Photodetector",

author = "Haowei Wang and Zhixiao Li and Chunjie Fu and Dan Yang and Li Zhang and Shengyi Yang and Bingsuo Zou",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = mar,

day = "15",

doi = "10.1109/LPT.2014.2386342",

language = "English",

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T1 - Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

AU - Wang, Haowei

AU - Li, Zhixiao

AU - Fu, Chunjie

AU - Yang, Dan

AU - Zhang, Li

AU - Yang, Shengyi

AU - Zou, Bingsuo

PY - 2015/3/15

Y1 - 2015/3/15

N2 - A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

AB - A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS=-40 V and VG=-40 V with 40 mW/cm 2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.

KW - Colloidal quantum dots (CQDs)

KW - Field-effect transistor (FET)

KW - Lead selenide (PbSe)

KW - Near infrared

KW - Photodetector

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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Solution-processed PbSe colloidal quantum dot-based near-infrared photodetector

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