Simulation of sub-wavelength 3D photomask induced polarization effect by RCWA

Liang Yang, Yanqiu Li*, Lihui Liu, Jianfeng Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

In 45nm technology node and beyond with hyper NA and Off-axis Illumination (OAI) lithography, mask induced polarization effect is remarkable. At this scale, traditional Kirchhoff approximation, in which the masks are considered to be infinitely thin objects, is no longer valid. Rigorous three-dimensional (3D) mask model is required for precise evaluation of mask diffraction. In this paper, a general 3D mask model based on the rigorous coupled-wave analysis (RCWA) is presented, and the change of polarization state as a function of mask and incident light properties is evaluated. The masks considered are the binary chrome mask and 10% Si-Si3N4 attenuated phase shifting mask. The results show that the mask induced polarization effects depend on the mask and incident light properties, such as mask material, absorber thickness, mask pitch, feature size, the polarization and incident angle of the light.

Original languageEnglish
Title of host publication6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
Subtitle of host publicationDesign, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
DOIs
Publication statusPublished - 2012
Event6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems - Xiamen, China
Duration: 26 Apr 201229 Apr 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8418
ISSN (Print)0277-786X

Conference

Conference6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
Country/TerritoryChina
CityXiamen
Period26/04/1229/04/12

Keywords

  • RCWA
  • lithography simulation
  • polarization effects
  • sub-wavelength

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