Simulation of sub-wavelength 3D photomask induced polarization effect by RCWA

Liang Yang, Yanqiu Li*, Lihui Liu, Jianfeng Wang

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

3 引用 (Scopus)

摘要

In 45nm technology node and beyond with hyper NA and Off-axis Illumination (OAI) lithography, mask induced polarization effect is remarkable. At this scale, traditional Kirchhoff approximation, in which the masks are considered to be infinitely thin objects, is no longer valid. Rigorous three-dimensional (3D) mask model is required for precise evaluation of mask diffraction. In this paper, a general 3D mask model based on the rigorous coupled-wave analysis (RCWA) is presented, and the change of polarization state as a function of mask and incident light properties is evaluated. The masks considered are the binary chrome mask and 10% Si-Si3N4 attenuated phase shifting mask. The results show that the mask induced polarization effects depend on the mask and incident light properties, such as mask material, absorber thickness, mask pitch, feature size, the polarization and incident angle of the light.

源语言英语
主期刊名6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
主期刊副标题Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
DOI
出版状态已出版 - 2012
活动6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems - Xiamen, 中国
期限: 26 4月 201229 4月 2012

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
8418
ISSN(印刷版)0277-786X

会议

会议6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
国家/地区中国
Xiamen
时期26/04/1229/04/12

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