Properties of Al-doped ZnO film transistors with different source and drain electrodes

Cheng Zhang; Dan Xie; Jianlong Xu; Gang Li; Xiaowen Zhang; Yilin Sun; Yuanfan Zhao; Tingting Feng; Tianling Ren

doi:10.1109/ICSICT.2014.7021184

Properties of Al-doped ZnO film transistors with different source and drain electrodes

Cheng Zhang, Dan Xie^*, Jianlong Xu, Gang Li, Xiaowen Zhang, Yilin Sun, Yuanfan Zhao, Tingting Feng, Tianling Ren

^*Corresponding author for this work

Tsinghua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021184
Publication status	Published - 23 Jan 2014
Externally published	Yes
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

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10.1109/ICSICT.2014.7021184

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Zhang, C., Xie, D., Xu, J., Li, G., Zhang, X., Sun, Y., Zhao, Y., Feng, T., & Ren, T. (2014). Properties of Al-doped ZnO film transistors with different source and drain electrodes. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021184 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021184

Zhang, Cheng ; Xie, Dan ; Xu, Jianlong et al. / Properties of Al-doped ZnO film transistors with different source and drain electrodes. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{26cbdad57cd94bac929e961f1476e2c5,

title = "Properties of Al-doped ZnO film transistors with different source and drain electrodes",

abstract = "We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.",

author = "Cheng Zhang and Dan Xie and Jianlong Xu and Gang Li and Xiaowen Zhang and Yilin Sun and Yuanfan Zhao and Tingting Feng and Tianling Ren",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021184",

language = "English",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

address = "United States",

}

Zhang, C, Xie, D, Xu, J, Li, G, Zhang, X, Sun, Y, Zhao, Y, Feng, T & Ren, T 2014, Properties of Al-doped ZnO film transistors with different source and drain electrodes. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021184, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021184

Properties of Al-doped ZnO film transistors with different source and drain electrodes. / Zhang, Cheng; Xie, Dan; Xu, Jianlong et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021184 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Properties of Al-doped ZnO film transistors with different source and drain electrodes

AU - Zhang, Cheng

AU - Xie, Dan

AU - Xu, Jianlong

AU - Li, Gang

AU - Zhang, Xiaowen

AU - Sun, Yilin

AU - Zhao, Yuanfan

AU - Feng, Tingting

AU - Ren, Tianling

PY - 2014/1/23

Y1 - 2014/1/23

N2 - We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.

AB - We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.

UR - http://www.scopus.com/inward/record.url?scp=84946687952&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2014.7021184

DO - 10.1109/ICSICT.2014.7021184

M3 - Conference contribution

AN - SCOPUS:84946687952

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Zhang C, Xie D, Xu J, Li G, Zhang X, Sun Y et al. Properties of Al-doped ZnO film transistors with different source and drain electrodes. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021184. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021184

Properties of Al-doped ZnO film transistors with different source and drain electrodes

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