@inproceedings{26cbdad57cd94bac929e961f1476e2c5,
title = "Properties of Al-doped ZnO film transistors with different source and drain electrodes",
abstract = "We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.",
author = "Cheng Zhang and Dan Xie and Jianlong Xu and Gang Li and Xiaowen Zhang and Yilin Sun and Yuanfan Zhao and Tingting Feng and Tianling Ren",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021184",
language = "English",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "United States",
}