Sun, Y., Xie, D., Xu, J., Feng, T., Zang, Y., Zhang, C., Dai, R., Meng, X., & Ji, Z. (2015). Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process. Journal of Applied Physics, 118(11), Article 115501. https://doi.org/10.1063/1.4930867
Sun, Yilin ; Xie, Dan ; Xu, Jianlong et al. / Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 11.
@article{a631c820fe51415c9e099805ee31570d,
title = "Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process",
abstract = "We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.",
author = "Yilin Sun and Dan Xie and Jianlong Xu and Tingting Feng and Yongyuan Zang and Cheng Zhang and Ruixuan Dai and Xiangjian Meng and Zhuoyu Ji",
note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",
year = "2015",
month = sep,
day = "21",
doi = "10.1063/1.4930867",
language = "English",
volume = "118",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "11",
}
Sun, Y, Xie, D, Xu, J, Feng, T, Zang, Y, Zhang, C, Dai, R, Meng, X & Ji, Z 2015, 'Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process', Journal of Applied Physics, vol. 118, no. 11, 115501. https://doi.org/10.1063/1.4930867
Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process. /
Sun, Yilin; Xie, Dan; Xu, Jianlong et al.
In:
Journal of Applied Physics, Vol. 118, No. 11, 115501, 21.09.2015.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process
AU - Sun, Yilin
AU - Xie, Dan
AU - Xu, Jianlong
AU - Feng, Tingting
AU - Zang, Yongyuan
AU - Zhang, Cheng
AU - Dai, Ruixuan
AU - Meng, Xiangjian
AU - Ji, Zhuoyu
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/9/21
Y1 - 2015/9/21
N2 - We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.
AB - We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.
UR - http://www.scopus.com/inward/record.url?scp=84942455905&partnerID=8YFLogxK
U2 - 10.1063/1.4930867
DO - 10.1063/1.4930867
M3 - Article
AN - SCOPUS:84942455905
SN - 0021-8979
VL - 118
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
M1 - 115501
ER -
Sun Y, Xie D, Xu J, Feng T, Zang Y, Zhang C et al. Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process. Journal of Applied Physics. 2015 Sept 21;118(11):115501. doi: 10.1063/1.4930867
