摘要
We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.
源语言 | 英语 |
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文章编号 | 115501 |
期刊 | Journal of Applied Physics |
卷 | 118 |
期 | 11 |
DOI | |
出版状态 | 已出版 - 21 9月 2015 |
已对外发布 | 是 |