Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process

Yilin Sun, Dan Xie*, Jianlong Xu, Tingting Feng, Yongyuan Zang, Cheng Zhang, Ruixuan Dai, Xiangjian Meng, Zhuoyu Ji

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

3 引用 (Scopus)

摘要

We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.

源语言英语
文章编号115501
期刊Journal of Applied Physics
118
11
DOI
出版状态已出版 - 21 9月 2015
已对外发布

指纹

探究 'Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process' 的科研主题。它们共同构成独一无二的指纹。

引用此