Yin, C. M., Tang, N., Zhang, S., Duan, J. X., Xu, F. J., Song, J., Mei, F. H., Wang, X. Q., Shen, B., Chen, Y. H., Yu, J. L., & Ma, H. (2011). Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. Applied Physics Letters, 98(12), Article 122104. https://doi.org/10.1063/1.3569948
Yin, C. M. ; Tang, N. ; Zhang, S. et al. / Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. In: Applied Physics Letters. 2011 ; Vol. 98, No. 12.
@article{8baaba7f4f914d2fac91e762b58869c6,
title = "Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures",
abstract = "The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.",
author = "Yin, {C. M.} and N. Tang and S. Zhang and Duan, {J. X.} and Xu, {F. J.} and J. Song and Mei, {F. H.} and Wang, {X. Q.} and B. Shen and Chen, {Y. H.} and Yu, {J. L.} and H. Ma",
year = "2011",
month = mar,
day = "21",
doi = "10.1063/1.3569948",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "12",
}
Yin, CM, Tang, N, Zhang, S, Duan, JX, Xu, FJ, Song, J, Mei, FH, Wang, XQ, Shen, B, Chen, YH, Yu, JL & Ma, H 2011, 'Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures', Applied Physics Letters, vol. 98, no. 12, 122104. https://doi.org/10.1063/1.3569948
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. / Yin, C. M.; Tang, N.; Zhang, S. et al.
In:
Applied Physics Letters, Vol. 98, No. 12, 122104, 21.03.2011.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures
AU - Yin, C. M.
AU - Tang, N.
AU - Zhang, S.
AU - Duan, J. X.
AU - Xu, F. J.
AU - Song, J.
AU - Mei, F. H.
AU - Wang, X. Q.
AU - Shen, B.
AU - Chen, Y. H.
AU - Yu, J. L.
AU - Ma, H.
PY - 2011/3/21
Y1 - 2011/3/21
N2 - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.
AB - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=79953901958&partnerID=8YFLogxK
U2 - 10.1063/1.3569948
DO - 10.1063/1.3569948
M3 - Article
AN - SCOPUS:79953901958
SN - 0003-6951
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
M1 - 122104
ER -
Yin CM, Tang N, Zhang S, Duan JX, Xu FJ, Song J et al. Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. Applied Physics Letters. 2011 Mar 21;98(12):122104. doi: 10.1063/1.3569948
