Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

C. M. Yin; N. Tang; S. Zhang; J. X. Duan; F. J. Xu; J. Song; F. H. Mei; X. Q. Wang; B. Shen; Y. H. Chen; J. L. Yu; H. Ma

doi:10.1063/1.3569948

Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

C. M. Yin, N. Tang, S. Zhang, J. X. Duan, F. J. Xu, J. Song, F. H. Mei, X. Q. Wang, B. Shen, Y. H. Chen, J. L. Yu, H. Ma

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

Original language	English
Article number	122104
Journal	Applied Physics Letters
Volume	98
Issue number	12
DOIs	https://doi.org/10.1063/1.3569948
Publication status	Published - 21 Mar 2011
Externally published	Yes

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title = "Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures",

abstract = "The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.",

author = "Yin, {C. M.} and N. Tang and S. Zhang and Duan, {J. X.} and Xu, {F. J.} and J. Song and Mei, {F. H.} and Wang, {X. Q.} and B. Shen and Chen, {Y. H.} and Yu, {J. L.} and H. Ma",

year = "2011",

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doi = "10.1063/1.3569948",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

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T1 - Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

AU - Yin, C. M.

AU - Tang, N.

AU - Zhang, S.

AU - Duan, J. X.

AU - Xu, F. J.

AU - Song, J.

AU - Mei, F. H.

AU - Wang, X. Q.

AU - Shen, B.

AU - Chen, Y. H.

AU - Yu, J. L.

AU - Ma, H.

PY - 2011/3/21

Y1 - 2011/3/21

N2 - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

AB - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

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DO - 10.1063/1.3569948

M3 - Article

AN - SCOPUS:79953901958

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122104

ER -

Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

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