Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

C. M. Yin; N. Tang; S. Zhang; J. X. Duan; F. J. Xu; J. Song; F. H. Mei; X. Q. Wang; B. Shen; Y. H. Chen; J. L. Yu; H. Ma

doi:10.1063/1.3569948

Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

C. M. Yin, N. Tang, S. Zhang, J. X. Duan, F. J. Xu, J. Song, F. H. Mei, X. Q. Wang, B. Shen, Y. H. Chen, J. L. Yu, H. Ma

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23 引用（Scopus）

摘要

The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

源语言	英语
文章编号	122104
期刊	Applied Physics Letters
卷	98
期	12
DOI	https://doi.org/10.1063/1.3569948
出版状态	已出版 - 21 3月 2011
已对外发布	是

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abstract = "The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.",

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T1 - Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

AU - Yin, C. M.

AU - Tang, N.

AU - Zhang, S.

AU - Duan, J. X.

AU - Xu, F. J.

AU - Song, J.

AU - Mei, F. H.

AU - Wang, X. Q.

AU - Shen, B.

AU - Chen, Y. H.

AU - Yu, J. L.

AU - Ma, H.

PY - 2011/3/21

Y1 - 2011/3/21

N2 - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

AB - The photocurrent has been measured in Al0.25 Ga0.75 N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin-orbit coupling of the two-dimensional electron gas in Al0.25 Ga0.75 N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.

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VL - 98

JO - Applied Physics Letters

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Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

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