Field-Effect Transistors: Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions (Adv. Electron. Mater. 8/2016)

Yao Guo, Jianbo Yin, Xianlong Wei, Zhenjun Tan, Jiapei Shu, Bo Liu, Yi Zeng, Song Gao, Hailin Peng*, Zhongfan Liu, Qing Chen

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Original languageEnglish
JournalAdvanced Electronic Materials
Volume2
Issue number8
DOIs
Publication statusPublished - 1 Aug 2016
Externally publishedYes

Keywords

  • band alignment
  • edge states
  • heterojunctions
  • molybdenum sulfide
  • photoelectrical response

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