Title: Special Associate Researcher
Contact number:
Department: Condensed Matter Physics
E-mail: Yaogu@bit.edu.cn
Address: 206, Lishi Building, Beijing Institute of Technology, Fangshan District, Beijing

Two-dimensional Materials and Electronics

2006-2010, College of Materials Science and Engineering, University of Science and Technology Beijing, Bachelor;
Ph.D., School of Information Science and Technology, Peking University, 2010-2015;

Associate Professor/Assistant Professor, School of Physics, Beijing Institute of Technology, China, 2017-present
Postdoctoral Fellow (Joint), Department of Electrical Engineering, Stanford University, USA, 2016-2017
Postdoctoral Fellow (Associate), Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 2015-2016

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Niu, Y., Li, Lei, Qi, Z., Aung, H., Han, X., Tenne, R., Yao, Y., Zak, A., Guo, Y.*, 0D van der Waals interfacial ferroelectricity. Nature Communications, 2023, 14, 5578
(Highlight: Ferroelectricity in zero dimensions Nature Electronics 2023, 6, 793)
Sun, Y.; Xu, Z.; Xu. S.; Bai, M.; Qi, Z.; Niu, Y.; Aung, H.; Tenne, T.; Zak, A. *; Guo, Y.*, Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system. Nature Communications, 2022, 13, 5391.
Guo, Y.; Zhang, W.; Wu, H.; Han, J.; Zhang, Y.; Lin, S.; Liu, C.; Xu, K.; Qiao, J.; Ji, W., et. al., Discovering the forbidden Raman modes at the edges of layered materials. Science Advances 2018, 4 (12), eaau6252.
Guo, Y.; Liu, C.; Yin, Q.; Wei, C.; Lin, S.; Hoffman, T. B.; Zhao, Y.; Edgar, J.; Chen, Q.; Lau, S. P., et. al.,Distinctive in-plane cleavage behaviors of two-dimensional layered materials. ACS Nano 2016, 10 (9), 8980-8988.
Guo, Y.; Han, Y.; Li, J.; Xiang, A.; Wei, X.; Gao, S.; Chen, Q., Study on the resistance distribution at the contact between molybdenum disulfide and metals. ACS Nano 2014, 8 (8), 7771-7779
Qi, Z., Mi, L., Qian, H., Zheng, W., Guo, Y.*, Chai, Y.*, Physical Reservoir Computing Based on Nanoscale Materials and Devices. Advanced Functional Materials, 2023, 2306149
Guo, Y. *; Sun, Y.; Tang, A.; Wang, C.-H.; Zhao, Y.; Bai, M.; Xu, S.; Xu, Z.; Tang, T.; Wang, S. et. al, Field-effect at electrical contacts to two-dimensional materials. Nano Research 2021, 1-7.
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Zhang, D.; Xu, S.; Xu, Z.; Qi, Z.; Niu, Y.; Yin, J.; Guo, Y.*, Programmable photovoltaics of metal-oxide-semiconductor junctions, Advanced Electronic Materials, 2022, 202200672
Bai, M.; Zhao, Y.; Xu, S.; Guo, Y.*, Asymmetric bias-induced barrier lowering as an alternative origin of current rectification in geometric diodes. Communications Physics, 2021.4, 236
Zhao, Y.; Sun, Y.; Bai, M.; Xu, S.; Wu, H.; Han, J.; Yin, H.; Guo, C.; Chen, Q.; Chai, Y., Guo Y.* Raman spectroscopy of dispersive two-dimensional materials: a systematic study on MoS2 solution. The Journal of Physical Chemistry C 2020, 124 (20), 11092-11099.
Guo, Y.; Wei, X.; Shu, J.; Liu, B.; Yin, J.; Guan, C.; Han, Y.; Gao, S.; Chen, Q., Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 2015, 106 (10), 103109.
Guo, Y.; Yin, J.; Wei, X.; Tan, Z.; Shu, J.; Liu, B.; Zeng, Y.; Gao, S.; Peng, H.; Liu, Z., Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions. Advanced Electronic Materials 2016, 2 (8), 1600048.
Chen, Q.; Chai, Y.; Guo, Y. IEEE 3M Nano, 2021, Xi'an, China
Guo, Y.; Chen, Q. MRS Spring Meeting, 2015, San Fransisco, US
Zhang, D.; Wu, Y.; Su, Y.-H.; Hsu, M.-C.; Ó Coileáin, C.; Cho, J.; Choi, M.; Chun, B. S.; Guo, Y.; Chang, C.-R., Charge density waves and degenerate modes in exfoliated monolayer 2H-TaS2. IUCrJ 2020, 7 (5).
Liu, Y.; Li, X.; Guo, Y.; Yang, T.; Chen, K.; Lin, C.; Wei, J.; Liu, Q.; Lu, Y.; Dong, L., Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering. Journal of Alloys and Compounds 2020, 827, 154364.
Shu, J.; Wu, G.; Guo, Y.; Liu, B.; Wei, X.; Chen, Q., The intrinsic origin of hysteresis in MoS 2 field effect transistors. Nanoscale 2016, 8 (5), 3049-3056.
Ning, Z.; Fu, M.; Wu, G.; Qiu, C.; Shu, J.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator. Nanoscale 2016, 8 (16), 8658-8665.
Han, Y.; Zheng, X.; Fu, M.; Pan, D.; Li, X.; Guo, Y.; Zhao, J.; Chen, Q., Negative photoconductivity of InAs nanowires. Physical Chemistry Chemical Physics 2016, 18 (2), 818-826.
Shi, T.; Fu, M.; Pan, D.; Guo, Y.; Zhao, J.; Chen, Q., Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm. Nanotechnology 2015, 26 (17), 175202.
Ning, Z.; Chen, Q.; Wei, J.; Zhang, R.; Ye, L.; Wei, X.; Fu, M.; Guo, Y.; Bai, X.; Wei, F., Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes. Nanoscale 2015, 7 (30), 13116-13124.
Ji, Q.; Kan, M.; Zhang, Y.; Guo, Y.; Ma, D.; Shi, J.; Sun, Q.; Chen, Q.; Zhang, Y.; Liu, Z., Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire. Nano letters 2015, 15 (1), 198-205.
Ning, Z.; Shi, T.; Fu, M.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., Transversally and axially tunable carbon nanotube resonators in situ fabricated and studied inside a scanning electron microscope. Nano letters 2014, 14 (3), 1221-1227.
Ning, Z.; Fu, M.; Shi, T.; Guo, Y.; Wei, X.; Gao, S.; Chen, Q., In situ multiproperty measurements of individual nanomaterials in SEM and correlation with their atomic structures. Nanotechnology 2014, 25 (27), 275703.
Zhang, C.; Ning, Z.; Liu, Y.; Xu, T.; Guo, Y.; Zak, A.; Zhang, Z.; Wang, S.; Tenne, R.; Chen, Q., Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption. Applied Physics Letters 2012, 101 (11), 113112.
Song, M.; Tong, L.; Liu, S; Zhang, Y.; Dong, J.; Ji Y.; Guo, Y; Wu, X.;Zhang, X.; Wang, R. Nonlinear Amplification of Chirality in Self-Assembled Plasmonic Nanostructures. ACS Nano 2021, 15, (3), 5715–5724.