Field-Effect Transistors: Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions (Adv. Electron. Mater. 8/2016)

Yao Guo; Jianbo Yin; Xianlong Wei; Zhenjun Tan; Jiapei Shu; Bo Liu; Yi Zeng; Song Gao; Hailin Peng; Zhongfan Liu; Qing Chen

doi:10.1002/aelm.201670047

Field-Effect Transistors: Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions (Adv. Electron. Mater. 8/2016)

Yao Guo, Jianbo Yin, Xianlong Wei, Zhenjun Tan, Jiapei Shu, Bo Liu, Yi Zeng, Song Gao, Hailin Peng^*, Zhongfan Liu, Qing Chen

^*此作品的通讯作者

Peking University

科研成果: 期刊稿件 › 评论/辩论

源语言	英语
期刊	Advanced Electronic Materials
卷	2
期	8
DOI	https://doi.org/10.1002/aelm.201670047
出版状态	已出版 - 1 8月 2016
已对外发布	是

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10.1002/aelm.201670047

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@article{c15dfaba408a4b7a9394b0073f0c1327,

title = "Field-Effect Transistors: Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions (Adv. Electron. Mater. 8/2016)",

keywords = "band alignment, edge states, heterojunctions, molybdenum sulfide, photoelectrical response",

author = "Yao Guo and Jianbo Yin and Xianlong Wei and Zhenjun Tan and Jiapei Shu and Bo Liu and Yi Zeng and Song Gao and Hailin Peng and Zhongfan Liu and Qing Chen",

year = "2016",

month = aug,

day = "1",

doi = "10.1002/aelm.201670047",

language = "English",

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journal = "Advanced Electronic Materials",

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T1 - Field-Effect Transistors

T2 - Edge-States-Induced Disruption to the Energy Band Alignment at Thickness-Modulated Molybdenum Sulfide Junctions (Adv. Electron. Mater. 8/2016)

AU - Guo, Yao

AU - Yin, Jianbo

AU - Wei, Xianlong

AU - Tan, Zhenjun

AU - Shu, Jiapei

AU - Liu, Bo

AU - Zeng, Yi

AU - Gao, Song

AU - Peng, Hailin

AU - Liu, Zhongfan

AU - Chen, Qing

PY - 2016/8/1

Y1 - 2016/8/1

KW - band alignment

KW - edge states

KW - heterojunctions

KW - molybdenum sulfide

KW - photoelectrical response

UR - http://www.scopus.com/inward/record.url?scp=84982223769&partnerID=8YFLogxK

U2 - 10.1002/aelm.201670047

DO - 10.1002/aelm.201670047

M3 - Comment/debate

AN - SCOPUS:84982223769

SN - 2199-160X

VL - 2

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 8

ER -