Field-effect at electrical contacts to two-dimensional materials

Yao Guo*, Yan Sun, Alvin Tang, Ching Hua Wang, Yanqing Zhao, Mengmeng Bai, Shuting Xu, Zheqi Xu, Tao Tang, Sheng Wang, Chenguang Qiu, Kang Xu, Xubiao Peng, Junfeng Han, Eric Pop, Yang Chai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: The field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and gives rise to abnormal current saturation and nonlinearity. On one hand, the current saturation hinders the devices’ driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits’ perception ability can be significantly enhanced, as evidenced using a coronavirus disease 2019 (COVID-19) critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D materials.[Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)4894-4900
Number of pages7
JournalNano Research
Volume14
Issue number12
DOIs
Publication statusPublished - Dec 2021

Keywords

  • electrical contact
  • field-effect
  • in-memory-computing
  • nonlinearity
  • two-dimensional materials

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