Erratum: Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

Yao Guo; Xianlong Wei; Jiapei Shu; Bo Liu; Jianbo Yin; Changrong Guan; Yuxiang Han; Song Gao; Qing Chen

doi:10.1063/1.4952406

Erratum: Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

Yao Guo, Xianlong Wei, Jiapei Shu, Bo Liu, Jianbo Yin, Changrong Guan, Yuxiang Han, Song Gao, Qing Chen^*

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Comment/debate

2 Citations (Scopus)

Original language	English
Article number	209902
Journal	Applied Physics Letters
Volume	108
Issue number	20
DOIs	https://doi.org/10.1063/1.4952406
Publication status	Published - 16 May 2016
Externally published	Yes

Access to Document

10.1063/1.4952406

Cite this

Guo, Y., Wei, X., Shu, J., Liu, B., Yin, J., Guan, C., Han, Y., Gao, S., & Chen, Q. (2016). Erratum: Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109)). Applied Physics Letters, 108(20), Article 209902. https://doi.org/10.1063/1.4952406

@article{06d25742895e488195083de201bd9b75,

title = "Erratum: Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))",

author = "Yao Guo and Xianlong Wei and Jiapei Shu and Bo Liu and Jianbo Yin and Changrong Guan and Yuxiang Han and Song Gao and Qing Chen",

year = "2016",

month = may,

day = "16",

doi = "10.1063/1.4952406",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Erratum

T2 - Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

AU - Guo, Yao

AU - Wei, Xianlong

AU - Shu, Jiapei

AU - Liu, Bo

AU - Yin, Jianbo

AU - Guan, Changrong

AU - Han, Yuxiang

AU - Gao, Song

AU - Chen, Qing

PY - 2016/5/16

Y1 - 2016/5/16

UR - http://www.scopus.com/inward/record.url?scp=84971265305&partnerID=8YFLogxK

U2 - 10.1063/1.4952406

DO - 10.1063/1.4952406

M3 - Comment/debate

AN - SCOPUS:84971265305

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 209902

ER -

Erratum: Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

Access to Document

Other files and links

Cite this

Erratum: Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))