Erratum: Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

Yao Guo; Xianlong Wei; Jiapei Shu; Bo Liu; Jianbo Yin; Changrong Guan; Yuxiang Han; Song Gao; Qing Chen

doi:10.1063/1.4952406

Erratum: Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109))

Yao Guo, Xianlong Wei, Jiapei Shu, Bo Liu, Jianbo Yin, Changrong Guan, Yuxiang Han, Song Gao, Qing Chen^*

^*此作品的通讯作者

Peking University

科研成果: 期刊稿件 › 评论/辩论

2 引用（Scopus）

源语言	英语
文章编号	209902
期刊	Applied Physics Letters
卷	108
期	20
DOI	https://doi.org/10.1063/1.4952406
出版状态	已出版 - 16 5月 2016
已对外发布	是

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10.1063/1.4952406

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引用此

Guo, Y., Wei, X., Shu, J., Liu, B., Yin, J., Guan, C., Han, Y., Gao, S., & Chen, Q. (2016). Erratum: Charge trapping at the MoS₂-SiO₂ interface and its effects on the characteristics of MoS₂ metal-oxide-semiconductor field effect transistors (Applied Physics Letters (2015) 106 (103109)). Applied Physics Letters, 108(20), 文章 209902. https://doi.org/10.1063/1.4952406

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AU - Gao, Song

AU - Chen, Qing

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