Enhanced NO2Sensitivity in Schottky-Contacted n-Type SnS2Gas Sensors

Wenjie Yan, Chengzhai Lv, Duan Zhang, Yanhui Chen, Lei Zhang, Cormac Ó Coileáin, Zhi Wang, Zhaotan Jiang, Kuan Ming Hung*, Ching Ray Chang, Han Chun Wu*

*Corresponding author for this work

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Abstract

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO2 (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO2, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO2 are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

Original languageEnglish
Pages (from-to)26746-26754
Number of pages9
JournalACS applied materials & interfaces
Volume12
Issue number23
DOIs
Publication statusPublished - 10 Jun 2020

Keywords

  • Schottky barrier
  • SnS
  • electrical contacts
  • gas sensor
  • layered materials

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Yan, W., Lv, C., Zhang, D., Chen, Y., Zhang, L., Ó Coileáin, C., Wang, Z., Jiang, Z., Hung, K. M., Chang, C. R., & Wu, H. C. (2020). Enhanced NO2Sensitivity in Schottky-Contacted n-Type SnS2Gas Sensors. ACS applied materials & interfaces, 12(23), 26746-26754. https://doi.org/10.1021/acsami.0c07193