Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

Ying Yang; Peng Zhu; Liu Yang; Jinjin Liu; Yongkai Li; Zhiwei Wang

doi:10.3390/cryst12050728

Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

Ying Yang, Peng Zhu, Liu Yang, Jinjin Liu, Yongkai Li, Zhiwei Wang^*

^*Corresponding author for this work

School of Physics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I₂ as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 10²¹ cm^-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

Original language	English
Article number	728
Journal	Crystals
Volume	12
Issue number	5
DOIs	https://doi.org/10.3390/cryst12050728
Publication status	Published - May 2022

Keywords

Crystal growth
Dirac semimetal
Electronic properties
X-ray diffraction

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@article{2b499e69e4f84ea28fc4811744b4890d,

title = "Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals",

abstract = "WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.",

keywords = "Crystal growth, Dirac semimetal, Electronic properties, X-ray diffraction",

author = "Ying Yang and Peng Zhu and Liu Yang and Jinjin Liu and Yongkai Li and Zhiwei Wang",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = may,

doi = "10.3390/cryst12050728",

language = "English",

volume = "12",

journal = "Crystals",

issn = "2073-4352",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "5",

}

TY - JOUR

T1 - Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

AU - Yang, Ying

AU - Zhu, Peng

AU - Yang, Liu

AU - Liu, Jinjin

AU - Li, Yongkai

AU - Wang, Zhiwei

PY - 2022/5

Y1 - 2022/5

N2 - WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

AB - WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

KW - Crystal growth

KW - Dirac semimetal

KW - Electronic properties

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=85134059272&partnerID=8YFLogxK

U2 - 10.3390/cryst12050728

DO - 10.3390/cryst12050728

M3 - Article

AN - SCOPUS:85134059272

SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 5

M1 - 728

ER -

Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

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Keywords

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