Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

Ying Yang; Peng Zhu; Liu Yang; Jinjin Liu; Yongkai Li; Zhiwei Wang

doi:10.3390/cryst12050728

Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

Ying Yang, Peng Zhu, Liu Yang, Jinjin Liu, Yongkai Li, Zhiwei Wang^*

^*此作品的通讯作者

物理学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

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摘要

WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I₂ as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 10²¹ cm^-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

源语言	英语
文章编号	728
期刊	Crystals
卷	12
期	5
DOI	https://doi.org/10.3390/cryst12050728
出版状态	已出版 - 5月 2022

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title = "Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals",

abstract = "WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.",

keywords = "Crystal growth, Dirac semimetal, Electronic properties, X-ray diffraction",

author = "Ying Yang and Peng Zhu and Liu Yang and Jinjin Liu and Yongkai Li and Zhiwei Wang",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = may,

doi = "10.3390/cryst12050728",

language = "English",

volume = "12",

journal = "Crystals",

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T1 - Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

AU - Yang, Ying

AU - Zhu, Peng

AU - Yang, Liu

AU - Liu, Jinjin

AU - Li, Yongkai

AU - Wang, Zhiwei

PY - 2022/5

Y1 - 2022/5

N2 - WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

AB - WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm-3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.

KW - Crystal growth

KW - Dirac semimetal

KW - Electronic properties

KW - X-ray diffraction

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DO - 10.3390/cryst12050728

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VL - 12

JO - Crystals

JF - Crystals

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Crystal Growth and Characterization of ZrSiS-Type Topological Dirac Semimetals

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