Bouet, L., Vidal, M., Mano, T., Ha, N., Kuroda, T., Durnev, M. V., Glazov, M. M., Ivchenko, E. L., Marie, X., Amand, T., Sakoda, K., Wang, G., & Urbaszek, B. (2014). Charge tuning in [111] grown GaAs droplet quantum dots. Applied Physics Letters, 105(8), Article 082111. https://doi.org/10.1063/1.4894174
Bouet, L. ; Vidal, M. ; Mano, T. et al. / Charge tuning in [111] grown GaAs droplet quantum dots. In: Applied Physics Letters. 2014 ; Vol. 105, No. 8.
@article{6c733803a5294092bbce23eb68b12873,
title = "Charge tuning in [111] grown GaAs droplet quantum dots",
abstract = "We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.",
author = "L. Bouet and M. Vidal and T. Mano and N. Ha and T. Kuroda and Durnev, {M. V.} and Glazov, {M. M.} and Ivchenko, {E. L.} and X. Marie and T. Amand and K. Sakoda and G. Wang and B. Urbaszek",
year = "2014",
month = aug,
day = "25",
doi = "10.1063/1.4894174",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",
}
Bouet, L, Vidal, M, Mano, T, Ha, N, Kuroda, T, Durnev, MV, Glazov, MM, Ivchenko, EL, Marie, X, Amand, T, Sakoda, K, Wang, G & Urbaszek, B 2014, 'Charge tuning in [111] grown GaAs droplet quantum dots', Applied Physics Letters, vol. 105, no. 8, 082111. https://doi.org/10.1063/1.4894174
Charge tuning in [111] grown GaAs droplet quantum dots. / Bouet, L.; Vidal, M.; Mano, T. et al.
In:
Applied Physics Letters, Vol. 105, No. 8, 082111, 25.08.2014.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Charge tuning in [111] grown GaAs droplet quantum dots
AU - Bouet, L.
AU - Vidal, M.
AU - Mano, T.
AU - Ha, N.
AU - Kuroda, T.
AU - Durnev, M. V.
AU - Glazov, M. M.
AU - Ivchenko, E. L.
AU - Marie, X.
AU - Amand, T.
AU - Sakoda, K.
AU - Wang, G.
AU - Urbaszek, B.
PY - 2014/8/25
Y1 - 2014/8/25
N2 - We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
AB - We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
UR - http://www.scopus.com/inward/record.url?scp=84907345486&partnerID=8YFLogxK
U2 - 10.1063/1.4894174
DO - 10.1063/1.4894174
M3 - Article
AN - SCOPUS:84907345486
SN - 0003-6951
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 082111
ER -
Bouet L, Vidal M, Mano T, Ha N, Kuroda T, Durnev MV et al. Charge tuning in [111] grown GaAs droplet quantum dots. Applied Physics Letters. 2014 Aug 25;105(8):082111. doi: 10.1063/1.4894174
