Charge tuning in [111] grown GaAs droplet quantum dots

L. Bouet; M. Vidal; T. Mano; N. Ha; T. Kuroda; M. V. Durnev; M. M. Glazov; E. L. Ivchenko; X. Marie; T. Amand; K. Sakoda; G. Wang; B. Urbaszek

doi:10.1063/1.4894174

Charge tuning in [111] grown GaAs droplet quantum dots

L. Bouet, M. Vidal, T. Mano, N. Ha, T. Kuroda, M. V. Durnev, M. M. Glazov, E. L. Ivchenko, X. Marie, T. Amand, K. Sakoda, G. Wang, B. Urbaszek

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

Original language	English
Article number	082111
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894174
Publication status	Published - 25 Aug 2014
Externally published	Yes

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title = "Charge tuning in [111] grown GaAs droplet quantum dots",

abstract = "We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.",

author = "L. Bouet and M. Vidal and T. Mano and N. Ha and T. Kuroda and Durnev, {M. V.} and Glazov, {M. M.} and Ivchenko, {E. L.} and X. Marie and T. Amand and K. Sakoda and G. Wang and B. Urbaszek",

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doi = "10.1063/1.4894174",

language = "English",

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T1 - Charge tuning in [111] grown GaAs droplet quantum dots

AU - Bouet, L.

AU - Vidal, M.

AU - Mano, T.

AU - Ha, N.

AU - Kuroda, T.

AU - Durnev, M. V.

AU - Glazov, M. M.

AU - Ivchenko, E. L.

AU - Marie, X.

AU - Amand, T.

AU - Sakoda, K.

AU - Wang, G.

AU - Urbaszek, B.

PY - 2014/8/25

Y1 - 2014/8/25

N2 - We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

AB - We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

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DO - 10.1063/1.4894174

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

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ER -

Charge tuning in [111] grown GaAs droplet quantum dots

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