摘要
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
源语言 | 英语 |
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文章编号 | 082111 |
期刊 | Applied Physics Letters |
卷 | 105 |
期 | 8 |
DOI | |
出版状态 | 已出版 - 25 8月 2014 |
已对外发布 | 是 |