Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Hao Nan Liu; Xiao Xia Suo; Lin Ao Zhang; Duan Zhang; Han Chun Wu; Hong Kang Zhao; Zhao Tan Jiang; Ying Lan Li; Zhi Wang

doi:10.1088/1674-1056/27/2/027104

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Hao Nan Liu, Xiao Xia Suo, Lin Ao Zhang, Duan Zhang, Han Chun Wu, Hong Kang Zhao, Zhao Tan Jiang, Ying Lan Li, Zhi Wang^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

Original language	English
Article number	027104
Journal	Chinese Physics B
Volume	27
Issue number	2
DOIs	https://doi.org/10.1088/1674-1056/27/2/027104
Publication status	Published - Feb 2018

Keywords

ZnO
graphene
multilayer thin films
resistive switching

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10.1088/1674-1056/27/2/027104

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title = "Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures",

abstract = "ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.",

keywords = "ZnO, graphene, multilayer thin films, resistive switching",

author = "Liu, {Hao Nan} and Suo, {Xiao Xia} and Zhang, {Lin Ao} and Duan Zhang and Wu, {Han Chun} and Zhao, {Hong Kang} and Jiang, {Zhao Tan} and Li, {Ying Lan} and Zhi Wang",

note = "Publisher Copyright: {\textcopyright} 2018 Chinese Physical Society and IOP Publishing Ltd.",

year = "2018",

month = feb,

doi = "10.1088/1674-1056/27/2/027104",

language = "English",

volume = "27",

journal = "Chinese Physics B",

issn = "1674-1056",

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TY - JOUR

T1 - Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

AU - Liu, Hao Nan

AU - Suo, Xiao Xia

AU - Zhang, Lin Ao

AU - Zhang, Duan

AU - Wu, Han Chun

AU - Zhao, Hong Kang

AU - Jiang, Zhao Tan

AU - Li, Ying Lan

AU - Wang, Zhi

PY - 2018/2

Y1 - 2018/2

N2 - ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

AB - ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

KW - ZnO

KW - graphene

KW - multilayer thin films

KW - resistive switching

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U2 - 10.1088/1674-1056/27/2/027104

DO - 10.1088/1674-1056/27/2/027104

M3 - Article

AN - SCOPUS:85043492938

SN - 1674-1056

VL - 27

JO - Chinese Physics B

JF - Chinese Physics B

IS - 2

M1 - 027104

ER -

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

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