Anti-ablation performance of plasma sprayed ZrB2/SiC coatings on C/C substrates and the influence of a chemical vapor deposited SiC interlayer

Zhi ting Gao*, Zhuang Ma, Qiang Liu, Ze Zhang, Yi fan Wang, Shao pu Liu, Ling Liu, Yan bo Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

To address the industrial usage of carbon/carbon (C/C) substrates with plasma-sprayed ZrB2/SiC coatings, a continuous and dense chemical vapor deposition (CVD)-SiC interlayer of 150 µm was deposited on a C/C substrate. The integration of CVD-SiC with the C/C substrate and plasma sprayed (PS) ZrB2/SiC coatings results in a tight interface. The SiC interlayer significantly reducing thermal stress in the optimized composites up to 1828 Mpa, a decrease of approximately 60% compared to standard composites without CVD-SiC. Ablation tests conducted showed that the optimized composite displayed remarkable mass ablation rate of − 11.7% after ablation for 600 s, with a notable increase of − 3.5% even after ablation for 1800 s. After 600 s of ablation, the exposed SiO2 layer is approximately 500 µm in size. After 900 s of ablation, the exposed SiO2 layer is approximately 1500 µm. After 1800 s of ablation, the SiO2 is completely evaporated, exposing the C/C matrix, at which point the coating has failed. The SiC interlayer improve the ablation resistance due to the continuous SiO2 film formed by the self-sealing and O anti-diffusive properties.

Original languageEnglish
Article number106591
JournalMaterials Today Communications
Volume36
DOIs
Publication statusPublished - Aug 2023

Keywords

  • Ablation resistance
  • C/C substrate
  • CVD-SiC interlayer
  • Plasma spraying

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Gao, Z. T., Ma, Z., Liu, Q., Zhang, Z., Wang, Y. F., Liu, S. P., Liu, L., & Liu, Y. B. (2023). Anti-ablation performance of plasma sprayed ZrB2/SiC coatings on C/C substrates and the influence of a chemical vapor deposited SiC interlayer. Materials Today Communications, 36, Article 106591. https://doi.org/10.1016/j.mtcomm.2023.106591