Jiang Miao, associate professor, doctoral supervisor, national high-level young talents. In September 2020, he received his PhD from the University of Tokyo, and in October of the same year, he was supported by the Foreign Special Researcher Program of the Japan Association for Academic Promotion. Selected as a national high-level young talent in 2021; In July 2022, he joined the School of Materials, Beijing Institute of Technology. He presided over the National Natural Science Foundation Youth Science Fund project and the State Key Laboratory of Environmental Impact Materials Technology Open Fund project.
6 years of overseas experience, with cross-professional background in materials science, physical electronics, and electronic engineering, long-term engaged in spintronics materials and devices related research, mainly focusing on the exploration and research of high-efficiency, low-energy, ultra-high-speed new magnetic memory devices. He has made a series of outstanding research achievements in the fields of spintronics materials and devices, information network construction, and high-performance storage of big data. Relevant papers have been published in high-level academic journals such as Nature Electronics, Nature Communications, and Advanced Science. It has been widely concerned and highly affirmed by well-known scholars in the field, and has been reported by the media for many times, and has been evaluated as "one of the important research advances in the field of spintronics, and an opportunity to develop and explore new materials and device structures that reduce the energy consumption required for magnetization turnover".
The team plans to recruit 2-3 graduate students (master students, master and doctoral students or doctoral students) every year. Students with interdisciplinary background are encouraged to apply (materials, physics, electronics, information, etc.), and can get opportunities to study abroad according to the progress of research during the study period. Candidates with relevant experience in magnetic material preparation, micro and nano device processing, magnetoelectrical testing or design and preparation of new wave absorbing materials are preferred. Students who are willing to do some interesting research work together are welcome to contact and join.

Spintronic materials and devices, multi-means control of magnetic film properties, electromagnetic absorption and shielding, etc.

2017.09-2020.09, Department of Electronic Engineering, University of Tokyo, Japan, Doctor of Engineering
2014.09-2017.06, Master of Engineering, Materials Science and Engineering, Tsinghua University (Double degree)
2014.10-2017.03, Tokyo Institute of Technology, Department of Physics and Electronics, Master of Engineering (double degree)
2010.09-2014.07, Beijing Institute of Technology, Material Forming and Control Engineering, Bachelor of Engineering

2022.07-present, Associate Professor, School of Materials, Beijing Institute of Technology
2020.10-2022.05, Faculty of Engineering, University of Tokyo, Special Fellow for Foreigners, Japan Association for the Promotion of Academia

M. Jiang*, H. Asahara, S. Sato, et al., Electric field control of spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer. Advanced Science 10, 2301540, 2023.
M. Jiang*, H. Asahara, S. Sato, et al., Suppression of the field-like torque for efficient magnetization switching in a spin–orbit ferromagnet. Nature Electronics 3, 751-756, 2020.
M. Jiang*, H. Asahara, S. Sato, et al., Efficient full spin-orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet. Nature Communications 10, 2590, 2019.
M. Jiang, X. Z. Chen, X. J. Zhou, et al., Electrochemical control of the ultrathin FeRh films. Applied Physics Letters, 108(20): 202404, 2016.
M. Jiang, E. Matsushita, Y. Takamura, et al., Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi, AIP Advances, 11(11), 115014, 2021.
M. Jiang, X. Z. Chen, X. J. Zhou, et al., The influence of film composition on the transition temperature of FeRh films. Journal of Crystal Growth, 438: 19-24, 2016.