Calculated based on number of publications stored in Pure and citations from Scopus
20202024

Research activity per year

Personal profile

Personal profile

Title: Associate Researcher
Contact number:
Department: Condensed Matter Physics
E-mail: hulin@bit.edu.cn
Address: A313, Liangxiang Campus, Beijing Institute of Technology

Research Interests

He is mainly engaged in theoretical calculation research on the evolution and physical properties of complex structures in materials, as well as the application of machine learning related methods in condensed matter physics, including the following aspects: 1. Relevant theoretical research on material growth process;
2. Study on the reconstruction and evolution of complex surfaces and their mechanisms;
3. Novel physical properties caused by complex structures in materials;
4. Related physical properties of low-dimensional materials;
5. Application of machine learning/neural network potential functions in condensed matter physics.

Education

2011-09 to 2016-06, University of Science and Technology of China, Ph. D., Supervisor: Academician Jinlong Yang
2007-09 to 2011-06, University of Science and Technology of China, Bachelor degree, Supervisor: Academician Jinlong Yang

Professional Experience

2021-11 till now, Beijing Institute of Technology, Associate Research Fellow/Pre-Appointed Assistant Professor
2020-10 to 2021-10, Beijing Research Center for Computing Science, Visiting Scholar
2019-10 to 2020-10, Postdoctoral Fellow, Hong Kong University of Science and Technology
2016-08 to 2019-09, Beijing Research Center for Computational Science/University of Utah, Postdoctoral Fellow

Research Achievement

So far, he has published more than 10 papers in important international academic journals such as Physical Review Letters, Advanced Functional Materials, Nano Letters, and each paper has been cited more than 100 times. The research was presented at the APS March Meeting. The novel spin-orbit coupling mechanism induced by spiral dislocation in semiconductors was selected as "Editors' Suggestion" and "Featured in Physics" by PRL magazine, and was highly praised by experts in related fields.
The main representative papers are as follows:
1. Lin Hu, Huaqing Huang, Zhengfei Wang, W. Jiang, Xiaojuan Ni, Yinong Zhou, V. Zielasek, M.G. Lagally, Bing Huang, and Feng Liu. Ubiquitous Spin-Orbit Coupling in a Screw Dislocation with High Spin Coherency. Phys. Rev. Lett. 121, 066401 (2018). (Editors’ Suggestion and Featured in Physics)
2. Lin Hu, Bing Huang and Feng Liu. Atomistic Mechanism Underlying the Si(111)-(77) Surface Reconstruction Revealed by Artificial Neural-network Potential. Phys. Rev. Lett. 126, 176101 (2021).
3. Lin Hu, Lei Kang, Jinlong Yang, Bing Huang, and Feng Liu. Significantly Enhanced Magnetoresistance in Monolayer WTe2 via Heterojunction Engineering: A First-principles Study. Nanoscale 10, 22231 (2018). (Selected as “Editor’s Choice: van der Waals heterostructures” and “2018 Nanoscale HOT Article Collection”).
4. Lin Hu, Xiaojun Wu, and Jinlong Yang. 2D Mn2C monolayer with high Neel temperature and large spin-orbit coupling for antiferromagnetic spintronics. Nanoscale 8, 12939 (2016).
5. Lin Hu, Jin Zhao, and Jinlong Yang. Nano-scale displacement sensing based on van der Waals interaction. Nanoscale 7, 8962 (2015).
6. Danshuo Liu, Lin Hu, Xuelin Yang, Zhihong Zhang, Haodong Yu, Fawei Zheng, Yuxia Feng, Jiaqi Wei, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Xinqiang Wang; ,Weikun Ge, Kaihui Liu, Bing Huang, Bo Shen. Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates. Advanced Functional Materials, 2022, DOI: 10.1002/adfm.202113211.
7. Xiaoyin Li, Shunhong Zhang, Huaqing Huang, Lin Hu, Feng Liu, and Qian Wang. Unidirectional Spin-orbit Interaction Induced by Line Defect in Monolayer Transition Metal Dichalcogenides for High Performance Devices. Nano. Lett. 19, 2005-6012 (2019).
8. Zhiya Zhang, Xiaojuan Ni, Huaqing Huang, Lin Hu, and Feng Liu. Valley splitting in the van der Waals heterostructure WSe2/CrI3: The role of atom superposition. Phys. Rev. B 99, 115441 (2019).
Project:
(1) National Natural Science Foundation of China, Youth Science Foundation Project, 11704021, Study and regulation of defects and doping properties in non-equilibrium two-dimensional wide-band gap semiconductors, 2018-01-01 to 2020-12-31, 250,000 yuan, Concluded, Host.
(2) National Natural Science Foundation of China, Youth Science Foundation Project, 21603205, Computer Simulation and Design of functional magnetic semiconductors and semi-metallic Materials, 2017-01-01 to 2019-12-31, 200,000 yuan, completed, participated.

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