Zno field-effect transistors with leadzirconate-titanate ferroelectric gate

Material Science

• Dielectric Material 60%
• Electron Transfer 20%
• Ferroelectric Material 100%
• Field Effect Transistor 100%
• Lead Zirconate Titanate 100%
• Oxide Film 20%
• Oxide Semiconductor 20%
• Permittivity 20%
• Radio Frequency Sputtering 20%
• Sol-Gel 20%
• Thin Films 20%
• Titanate 100%
• Zinc Oxide 80%

Engineering

• Channel Layer 16%
• Crystallization Temperature 16%
• Current Drain 33%
• Dielectrics 16%
• Drain Voltage 16%
• Electron Channel 16%
• Field-Effect Transistor 100%
• Gate Dielectric 50%
• Gate Voltage 16%
• Lead Zirconate 83%
• Material Cost 16%
• Nonvolatile Memory 16%
• Oxide Film 16%
• Oxide Semiconductor 16%
• Radio Frequency 16%
• Source Characteristic 16%
• Thin Films 16%
• Titanate 100%