Material Science
Dielectric Material
60%
Electron Transfer
20%
Ferroelectric Material
100%
Field Effect Transistor
100%
Lead Zirconate Titanate
100%
Oxide Film
20%
Oxide Semiconductor
20%
Permittivity
20%
Radio Frequency Sputtering
20%
Sol-Gel
20%
Thin Films
20%
Titanate
100%
Zinc Oxide
80%
Engineering
Channel Layer
16%
Crystallization Temperature
16%
Current Drain
33%
Dielectrics
16%
Drain Voltage
16%
Electron Channel
16%
Field-Effect Transistor
100%
Gate Dielectric
50%
Gate Voltage
16%
Lead Zirconate
83%
Material Cost
16%
Nonvolatile Memory
16%
Oxide Film
16%
Oxide Semiconductor
16%
Radio Frequency
16%
Source Characteristic
16%
Thin Films
16%
Titanate
100%