摘要
Although new spintronic devices based on the giant spin-orbit splitting of single-layer MoS2 have been proposed, such splitting has not been studied effectively in experiments. This Letter reports the valence band spin-orbit splitting in single-layer MoS2 for the first time, probed by the triply resonant Raman scattering process. We found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS2 are dramatically enhanced. Such resonant Raman enhancement arises from the electron-two-phonon triple resonance via the deformation potential and Fröhlich interaction. As a sensitive and precise probe for the spin-orbit splitting, the triply resonant Raman scattering will provide a new and independent route to study the spin characteristics of MoS2.
源语言 | 英语 |
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文章编号 | 126801 |
期刊 | Physical Review Letters |
卷 | 111 |
期 | 12 |
DOI | |
出版状态 | 已出版 - 17 9月 2013 |
已对外发布 | 是 |