Molecular beam epitaxy growth of topological insulator Bi₄Br₄ on silicon for the infrared applications

Material Science

• Silicon 100%
• Film 100%
• Thin Films 100%
• Molecular Beam Epitaxy 100%
• Single Crystal 33%
• Monolayers 33%
• Raman Spectroscopy 33%
• X-Ray Photoelectron Spectroscopy 33%
• Physical Property 33%
• Nanowire 33%
• Fourier Transform Infrared Spectroscopy 33%
• Higher-Order Topological Insulator 33%

Physics

• Molecular Beam Epitaxy 100%
• Thin Films 100%
• Topological Insulator 100%
• Raman Spectroscopy 33%
• X Ray Spectroscopy 33%
• Optoelectronics 33%
• Single Crystal 33%
• Nanowires 33%
• FTIR Spectroscopy 33%
• Atomic Force Microscopy 33%

Engineering

• Thin Films 100%
• Growth Temperature 66%
• Temperature Range 33%
• One Dimensional 33%
• Fourier Transform 33%
• Potential Application 33%
• Optoelectronics 33%
• Ray Photoelectron Spectroscopy 33%
• Nanowires 33%
• Monolayer 33%
• Atomic Force Microscopy 33%
• Silicon Substrate 33%
• State Characteristic 33%