High-speed GaN micro-LED arrays for data communications

A. E. Kelly; J. J.D. McKendry; S. Zhang; D. Massoubre; B. R. Rae; R. P. Green; R. K. Henderson; M. D. Dawson

doi:10.1109/ICTON.2012.6253883

High-speed GaN micro-LED arrays for data communications

A. E. Kelly^*, J. J.D. McKendry, S. Zhang, D. Massoubre, B. R. Rae, R. P. Green, R. K. Henderson, M. D. Dawson

^*此作品的通讯作者

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

18 引用（Scopus）

摘要

We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

源语言	英语
主期刊名	ICTON 2012 - 14th International Conference on Transparent Optical Networks
DOI	https://doi.org/10.1109/ICTON.2012.6253883
出版状态	已出版 - 2012
已对外发布	是
活动	14th International Conference on Transparent Optical Networks, ICTON 2012 - Coventry, 英国期限: 2 7月 2012 → 5 7月 2012

出版系列

姓名	International Conference on Transparent Optical Networks
ISSN（电子版）	2162-7339

会议

会议	14th International Conference on Transparent Optical Networks, ICTON 2012
国家/地区	英国
市	Coventry
时期	2/07/12 → 5/07/12

访问文件

10.1109/ICTON.2012.6253883

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引用此

Kelly, A. E., McKendry, J. J. D., Zhang, S., Massoubre, D., Rae, B. R., Green, R. P., Henderson, R. K., & Dawson, M. D. (2012). High-speed GaN micro-LED arrays for data communications. 在 ICTON 2012 - 14th International Conference on Transparent Optical Networks 文章 6253883 (International Conference on Transparent Optical Networks). https://doi.org/10.1109/ICTON.2012.6253883

@inproceedings{3e52a23476bb4bdcab827e9121590f49,

title = "High-speed GaN micro-LED arrays for data communications",

abstract = "We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.",

keywords = "complementary metal-oxide-semiconductor, high bandwidth, micro-light-emitting diodes (micro-LEDs), multi-channel",

author = "Kelly, {A. E.} and McKendry, {J. J.D.} and S. Zhang and D. Massoubre and Rae, {B. R.} and Green, {R. P.} and Henderson, {R. K.} and Dawson, {M. D.}",

year = "2012",

doi = "10.1109/ICTON.2012.6253883",

language = "English",

isbn = "9781467322270",

series = "International Conference on Transparent Optical Networks",

booktitle = "ICTON 2012 - 14th International Conference on Transparent Optical Networks",

note = "14th International Conference on Transparent Optical Networks, ICTON 2012 ; Conference date: 02-07-2012 Through 05-07-2012",

}

Kelly, AE, McKendry, JJD, Zhang, S, Massoubre, D, Rae, BR, Green, RP, Henderson, RK & Dawson, MD 2012, High-speed GaN micro-LED arrays for data communications. 在 ICTON 2012 - 14th International Conference on Transparent Optical Networks., 6253883, International Conference on Transparent Optical Networks, 14th International Conference on Transparent Optical Networks, ICTON 2012, Coventry, 英国, 2/07/12. https://doi.org/10.1109/ICTON.2012.6253883

TY - GEN

T1 - High-speed GaN micro-LED arrays for data communications

AU - Kelly, A. E.

AU - McKendry, J. J.D.

AU - Zhang, S.

AU - Massoubre, D.

AU - Rae, B. R.

AU - Green, R. P.

AU - Henderson, R. K.

AU - Dawson, M. D.

PY - 2012

Y1 - 2012

N2 - We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

AB - We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

KW - complementary metal-oxide-semiconductor

KW - high bandwidth

KW - micro-light-emitting diodes (micro-LEDs)

KW - multi-channel

UR - http://www.scopus.com/inward/record.url?scp=84867009364&partnerID=8YFLogxK

U2 - 10.1109/ICTON.2012.6253883

DO - 10.1109/ICTON.2012.6253883

M3 - Conference contribution

AN - SCOPUS:84867009364

SN - 9781467322270

T3 - International Conference on Transparent Optical Networks

BT - ICTON 2012 - 14th International Conference on Transparent Optical Networks

T2 - 14th International Conference on Transparent Optical Networks, ICTON 2012

Y2 - 2 July 2012 through 5 July 2012

ER -

High-speed GaN micro-LED arrays for data communications

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