@inproceedings{3e52a23476bb4bdcab827e9121590f49,
title = "High-speed GaN micro-LED arrays for data communications",
abstract = "We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.",
keywords = "complementary metal-oxide-semiconductor, high bandwidth, micro-light-emitting diodes (micro-LEDs), multi-channel",
author = "Kelly, {A. E.} and McKendry, {J. J.D.} and S. Zhang and D. Massoubre and Rae, {B. R.} and Green, {R. P.} and Henderson, {R. K.} and Dawson, {M. D.}",
year = "2012",
doi = "10.1109/ICTON.2012.6253883",
language = "English",
isbn = "9781467322270",
series = "International Conference on Transparent Optical Networks",
booktitle = "ICTON 2012 - 14th International Conference on Transparent Optical Networks",
note = "14th International Conference on Transparent Optical Networks, ICTON 2012 ; Conference date: 02-07-2012 Through 05-07-2012",
}