Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang; Jianbao Li; Huazhang Zhai; Shuxia Zhang

doi:10.1023/A:1014978510214

Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang^*, Jianbao Li, Huazhang Zhai, Shuxia Zhang

^*此作品的通讯作者

Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

源语言	英语
页（从-至）	431-434
页数	4
期刊	Journal of Materials Science Letters
卷	21
期	5
DOI	https://doi.org/10.1023/A:1014978510214
出版状态	已出版 - 1 3月 2002
已对外发布	是

访问文件

10.1023/A:1014978510214

其它文件与链接

链接到 Scopus 的出版物

引用此

Zhang, B., Li, J., Zhai, H., & Zhang, S. (2002). Growth of SiC-AlN whisker with the polytype of 2H. Journal of Materials Science Letters, 21(5), 431-434. https://doi.org/10.1023/A:1014978510214

@article{ba3dbf0b2684494fbf7cd09950d8b7db,

title = "Growth of SiC-AlN whisker with the polytype of 2H",

abstract = "2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.",

author = "Bo Zhang and Jianbao Li and Huazhang Zhai and Shuxia Zhang",

year = "2002",

month = mar,

day = "1",

doi = "10.1023/A:1014978510214",

language = "English",

volume = "21",

pages = "431--434",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

number = "5",

}

TY - JOUR

T1 - Growth of SiC-AlN whisker with the polytype of 2H

AU - Zhang, Bo

AU - Li, Jianbao

AU - Zhai, Huazhang

AU - Zhang, Shuxia

PY - 2002/3/1

Y1 - 2002/3/1

N2 - 2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

AB - 2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=0036505458&partnerID=8YFLogxK

U2 - 10.1023/A:1014978510214

DO - 10.1023/A:1014978510214

M3 - Article

AN - SCOPUS:0036505458

SN - 0261-8028

VL - 21

SP - 431

EP - 434

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 5

ER -

Growth of SiC-AlN whisker with the polytype of 2H

摘要

访问文件

其它文件与链接

指纹

引用此