Abstract
2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.
Original language | English |
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Pages (from-to) | 431-434 |
Number of pages | 4 |
Journal | Journal of Materials Science Letters |
Volume | 21 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Mar 2002 |
Externally published | Yes |
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Zhang, B., Li, J., Zhai, H., & Zhang, S. (2002). Growth of SiC-AlN whisker with the polytype of 2H. Journal of Materials Science Letters, 21(5), 431-434. https://doi.org/10.1023/A:1014978510214