摘要
The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.
| 源语言 | 英语 |
|---|---|
| 页（从-至） | 401-406 |
| 页数 | 6 |
| 期刊 | Kang T'ieh/Iron and Steel (Peking) |
| 卷 | 31 |
| 期 | 11 |
| 出版状态 | 已出版 - 11月 1996 |
| 已对外发布 | 是 |